Part Number Hot Search : 
BZX51 APE3002 GP1U502X 2C100 X5001P CY7C10 GA102 PL100
Product Description
Full Text Search
 

To Download BDV66 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  inchange semiconductor isc product specification isc silicon pnp darlington power transistor BDV66/a/b/c description collector current -i c = - 16a collector-emitter saturation voltage- : v ce(sat) = -2.0v(max.)@ i c = -10a complement to type bdv67/a/b/c applications designed for audio output stages and general amplifier and switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit BDV66 -80 BDV66a -100 BDV66b -120 v cbo collector-base voltage BDV66c -140 v BDV66 -60 BDV66a -80 BDV66b -100 v ceo collector-emitter voltage BDV66c -120 v v ebo emitter-base voltage -5 v i c collector current-continuous -16 a i cm collector current-peak -20 a i b b base current-continuous -0.5 a p c collector power dissipation @ t c =25 175 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 0.625 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor BDV66/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BDV66 -60 BDV66a -80 BDV66b -100 v ceo(sus) collector-emitter sustaining voltage BDV66c i c = -100ma ;i b =0 -120 v v ce( sat ) collector-emitter saturation voltage i c = -10a; i b = -40ma -2 v v be( on ) base-emitter on voltage i c = -10a ; v ce = -3v -2.5 v i ceo collector cutoff current v ce = 1 / 2 v ceomax ; i b = 0 -1 ma BDV66 v cb = -40v;i e = 0;t j = 150 BDV66a v cb = -50v;i e = 0;t j = 150 BDV66b v cb = -60v;i e = 0;t j = 150 i cbo collector cutoff current BDV66c v cb = -70v;i e = 0;t j = 150 -5 ma i cbo collector cutoff current v cb = v cbomax ;i e = 0 -1 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -5 ma h fe dc current gain i c = -10a ; v ce = -3v 1000 c ob output capacitance i e = 0 ; v cb = -10v; f test = 1mhz 300 pf switching times t on turn-on time 1 s t off turn-off time i c = -10a; i b1 = -i b2 = -40ma; v cc = 12v 3.5 s isc website www.iscsemi.cn 2


▲Up To Search▲   

 
Price & Availability of BDV66

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X